A newly proposed resonant-tunneling bipolar transistors (RTBTs) with a quantum well in the base are studed and their static characteristics are evaluated. The RTBT can be prospective for switching applications and memories based on single transistor sells.
Novel quantum-well RT voltage-controlled laser-transistors (LTs) are under consideration. It has been shown that LTs can exhibit bistable electrical as well as optical behaviour. The proposed LTs seems to be attractive for future high-performance switching and computational systems.
Based on Neuron MOS-Transistor (vMOS) Threshold Gates (TG) features are studied. Design methodologies for static and clocked relizations are developed. Estimation the maximal number of TG inputs was made.