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Computer Solid state Physics Laboratory |
Victor I. Ryzhii
Professor |
Vladimir V'yurkov
Visiting Professor |
Irina I. Kymyrova
Assistant Professor |
Maxim V. Ryzhii
Assistant Professor |
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The research activity of the Computer Solid State Physics Laboratory is focused on theoretical studies and computer modeling of novel electronic and optoelectronic quantum devices based on semiconductor micro- and nanostructures. A substantial part of activity of the laboratory is associated with the development of Internet interactive educational resources and materials. Since the laboratory establishment in 1993, its members have published more than 100 journal articles and made more than 100 presentations at international conferences.
Original research results obtained in this academic year have been published in 12 refereed journal papers (published in J. Appl. Phys., Jpn. J. Appl. Phys., Physica E, Int. J of High-Speed Electron., Microelectron J., Physica Status Solidi) and presented at different international conferences (13 presentations).
The Computer Solid State Physics Laboratory conducts the research in cooperation with leading research groups at:
Rensselaer Polytechnic Institute (Troy, USA),
Wayne State University (Detroit, USA),
Sensor Electronic Technology, Inc. (Columbia, USA),
ATR Communication Research Laboratories (Kyoto, Japan),
Ioffe Physical-Technical Institute (St.Petersburg, Russia),
Chalmers Institute of Technology (Gothenburg, Sweden),
Institute for Microstructural Sciences (Ottawa, Canada), and others.
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| [m-ryzhii-01:2002] | M. Ryzhii, V. Ryzhii, and V. Mitin. Electric-field and spacecharge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modeling. Microelectronics J., in press:in press, 2003.
As predicted quantum dot infrared photodetectors (QDIPs) based one multiple QD structures utilizing the electron (hole) transitions from bound state in QDs into continuum state can surpass quantum well infrared photodetectors (QWIPs). A number of research groups have reported fabrication and experimental and investigation of QDIPs based on InAs/GaAs,InGaAs/GaAs, InGaAs/InGaP, and Ge/Si structures. However, most of fabricated QDIPs are far short of optimum. The optimization of QDIPs appears to be fairly complex issue. This is due to a three-dimensionality of the QDIP structure and non-equilibrium character of the electron (hole) transport processes in it. Some features of QDIP operation can be clarified using analytical approaches, but a detailed ensemble Monte Carlo (MC)modeling of the processes determining the QDIP ultimate performance is indispensable. |
| [m-ryzhii-02:2002] | V. Ryzhii, M. Ryzhii, and H.C. Liu. A self-consistentmodel for quantum well infrared photodetectors with thermionic injection under dark conditions. J. Appl. Phys., 92:207-213, 2002.
We present a self-consistent analytical model describing transport processes in quantumwell infrared photodetectors (QWIPs) under dark conditions. The model takes into account electron thermionic emission from the quantumwells, thermionic injection from the emitter contact, and features of transport and capture in the self-consistent electric field in the QWIP active region. Using an assumption that the rates of the electron escape from and capture into a QW are functions of the electric fields only in the barriers sandwiching this QW, we calculate the electric field and charge distributions as well as dark current voltage characteristics. We clarify the origin of steep dark current characteristics. It is confirmed that the effect of the emitter contact substantially weakens with increasing number of QWs in the QWIP structure. |
| [m-ryzhii-03:2002] | V. Ryzhii, M. Ryzhii, I. Khmyrova, R. Suris, V. Mitin, and M. Shur. Quantum well and quantum dot infrared photodetectors: Physics of operation and modeling. SPIE, 5126:129-140, 2002.
We review physical e??ects in quantum well and quantum dot infrared devices and discuss their features using the device models developed in our previous papers. |
| [m-ryzhii-04:2002] | V. Ryzhii, M. Ryzhii, and H.C. Liu. Analysis of dual-band quantum well photodetectors. J. Appl. Phys., 91:5887-5891, 2002.
We present a simple model for quantum well photodetectors for simultaneous middle infrared and near infrared or visible dual-band detection. We derive an alytical formulas for the responsivity and detectivity as functions of the material and structural parameters. It is shown that the characteristics of near infrared and visible radiation detection can be sensitive to parameters of the hole transport, capture into quantum wells, and reflection from the electron emitting contact. We demonstrate that a properly designed photodetector can exhibit comparable performance for both middle infrared and near infrared (or visible) detection. The obtained results can be used to optimize the photodetector design and characteristics in both spectral ranges. |
| [v-ryzhii-01:2002] | V. Ryzhii, S. Satou, and M.S. Shur. Admittance of a slot diode with a two-dimensional electron channel. J. Appl. Phys., 94:10041-10045, 2003.
We calculate the frequency-dependent admittance of a diode with a two-dimensional electron channel in a slot between strip-like contacts. Hydrodynamic electron transport equations coupled with a two-dimensional Poisson equation for the self-consistent electric potential are used. Using the calculated expression for the admittance, we analyze the effect of the planar contacts and external capacitance on the plasma oscillations in the system under consideration. The obtained results are useful for the interpretation of experimental observation of plasma effects in high-electron mobility transistors and optimization of terahertz devices based on these transistors. |
| [v-ryzhii-02:2002] | A. Satou, I. Khmyrova, V. Ryzhii, and M.S. Shur. Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors. Semicond. Sci. Technol., 18:460-469, 2003.
We develop a device model for a high-electron-mobility transistor (HEMT) affected by the incoming terahertz radiation. The model takes into account the electron plasma oscillations in the HEMT channel, tunneling of electrons from the channel into the gate layer and electron transit-time effects in this layer. It is shown that the excitation of plasma oscillations accompanied by the delay in the electron propagation across the gate layerand a strong nonlinearity of the tunneling current can result in significant features of the HEMT high-frequency linear and nonlinear characteristics. We derive a formula for the HEMT gate-to-source/drain admittance. We also calculate the variation of the dc current induced by the terahertz radiation and the HEMT detection responsivity. It is found that the detection responsivity exhibits sharp resonant peaks corresponding to the frequencies of plasma oscillations. The resonant plasma frequencies and the positions of the admittance and detection responsivity peaks depend on the gate length and the lengths of the contact regions (source-to-gate and gate-to-drain spacings) and can be tuned by the gate voltage. The coincidence of the plasma and transit-time resonances can lead to a marked sharpening of the responsivity peaks. |
| [v-ryzhii-03:2002] | V. Ryzhii and M. Shur. Tunneling-and barrier-injection transit time mechanisms of terahertz plasma instability in high-electron mobility transistors. Semicond. Sci. Technol., 17:1168-1171, 2002.
We study theoretically the plasma instability in a heterostructure similar to a high-electron mobility transistor. The instability under consideration is associated with the transit-time effects of the electrons injected from the channel into the gate layer due to tunneling or thermionic emission. The frequencies of the self-excited plasma oscillations, which fall within the terahertz range, are determined by the electron concentration in the channel and its length. We find the instability criteria expressed via the structural parameters and applied voltage. |
| [v-ryzhii-04:2002] | V. Ryzhii, I. Khmyrova, A. Satou, P.O. Vaccaro, T. Aida, and M. Shur. Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation. J. Appl. Phys., 92:5756-5760, 2002.
We show that modulated near-infrared radiation can generate terahertz plasma oscillations in the channel of a high-electron mobility transistor. This effect is associated with a temporarily periodic injection of the electrons photoexcited by modulated near-infrared radiation into the transistor channel. The excitation of the plasma oscillations has the resonant character. It results in the pertinent excitation of the electric current in the external circuit that can be used for generation of terahertz electromagnetic radiation. |
| [v-ryzhii-05:2002] | V. Ryzhii, A. Satou, I. Khmyrova, T. Ikegami, K. Kubota, P.O. Vaccaro, J.M. Zanardi Ocampo, and T. Aida. Performance analysis of lateral p-n junction laser-transistor. J. Appl. Phys., 92:4459-4464, 2002.
We study the performance of a lateral p-n junction quantum-welledge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cut off modulation frequency associated with the gate recharging. |
| [v-ryzhii-06:2002] | V. Ryzhii and M. Shur. Analysis of tunneling-injection transittime effects and self-excitation of terahertz plasma oscillations in high-electron-mobility transistors. Jpn. J. Appl. Phys., 41:L922-L924, 2002.
We analyze dynamic behavior of the electron system in high-electron mobility transistors (HEMTs) associated with tunneling injection from the two-dimensional channel into the gate under forward bias. We show that the propagation of the injected electrons across the gate layer can result in the self-excitation of plasma oscillations in the HEMT when the transit-time and plasma resonances are close. The resonant frequencies in HEMT swith reasonable parameters correspond to the terahertz range. The criterion of the plasma instability is expressed via the structural parameters. The self-excitation of the plasma oscillations can be used to generate terahertz radiation. |
| [v-ryzhii-07:2002] | V. Ryzhii and H.C. Liu. Photonic breakdown in up-conversion imaging devices based on the integration of quantum-well infrared photodetector andlight-emittingdiode. J. Appl. Phys., 92:2354-2358, 2002.
We analyze the e??ect of photon recycling on up-conversion in a heterostructure device including a quantum well infrared photodetector (QWIP) integrated with a light emitting diode (LED). Such a QWIP-LED device converts middle infrared radiation into near infrared (NIR) or visible radiation (VIR) utilizing intersubband transitions in the QWIP and interband transitions in the LED. We show that the reabsorption of NIR/VIR photons in the QWIP can substantially affect the up-conversion of both uniform illuminations and infrared images. As demonstrated, this effect can cause a photonic breakdown associated with a positive feedback between the emission of NIR/VIR photons from the LED and the resulting photocurrent in the QWIP. |
| [v-ryzhii-08:2002] | V. Ryzhii. Negative differential infrared photoconductivity in quantum-dot structures. Physica E, 12:868-871, 2002.
Using a simple model for monopolar quantum-dot structures which takes into account the heating of mobile (unbound) electrons, we calculated the current voltage characteristics of these structures under infrared illumination and revealed the origin of the effect of negative differential infrared photoconductivity observedin recent experiments. It is clarified also why decreasing photo currentvoltage characteristics coexist with steep rising dark current-voltage characteristics. |
| Referred Proceeding Papers |
| [m-ryzhii-05:2002] | M. Ryzhii, V. Ryzhii, and V. Mitin. Electric-field and spacecharge distributions in InAs/GaAs quantum-dot infrared photodetectors: Ensemble Monte Carlo particle modeling. In Low Dimensional Structures and Devices, pages WeO{2, Fortaleza-Ceara, Brazil, Dec. 2002.
As predicted quantum dot infrared photodetectors (QDIPs) based onemultiple QD structures utilizing the electron (hole) transitions from bound state in QDs into continuum state can surpass quantum well infrared photodetectors (QWIPs) . A number of research groups have reported fabrication and experimental and investigation of QDIPs based on InAs/GaAs, InGaAs/GaAs, InGaAs/InGaP, and Ge/Si structures. However, most of fabricated QDIPs are far short of optimum. The optimization of QDIPs appears to be fairly complex issue. This is due to a three-dimensionality of the QDIP structure and non-equilibrium character of the electron (hole) transport processes in it. Some features of QDIP operation can be clarified using analytical approaches, but a detailed ensemble Monte Carlo (MC) modeling of the processes determining the QDIP ultimate performance is indispensable. |
| [m-ryzhii-06:2002] | M. Ryzhii, V. Mitin, and V. Ryzhii. Ensemble Monte Carlo particle modelling og non-equilibrium electron transport in quantum dot infrared photodetectors. In Superlattices, Nanostructures and Nanodevices, pages II-P111, Toulouse, France, Jul. 2002.
The results of theoretical and experimental studies of QDIPs based on different QDs structures has been well documented. However, most of fabricated QDIPs are far short of optimum. Because of the three-dimensionality of the QDIP structure and non-equilibrium character of the electron transport processes determining their operation, the optimization of QDIPs is a fairly complex problem. The solution of this problem requires the application of computer modeling of the electron effects in QDIPs. In this communication, we propose a quasi-three dimensional model for electron transport in QDIPs. This model uses ensemble Monte Carlo (MC) particle method. The model under consideration is a generalized version of that used previously for QWIPs. |
| [v-ryzhii-09:2002] | V. Ryzhii. Plasma mechanism of terahertz radiation generation in HEMT-like structures. In 58th Annual Meeting of Japanese Physical Society, page 29pYH, Sendai, Japan, Mar. 2003.
The problem of plasma oscillations in heterostructures with two-dimensional electron gas in the gated channel similar to a high-electron mobility transistor (HEMT) has been extensively studied both theoretically in experimentally. Such a system can be used for detection for frequency multiplication of electromagnetic radiation with the terahertz frequencies. It's also very promising for generatingterahertz radiation.We presentthe conceptof terahertz sources utilizing the excitation of plasma oscillations by optical signals (photomixing) and the self-excitation (plasma instabilities) of these oscillations due to electron tunneling from the channel into the gate in HEMT-like devices. We consider the structure with a single- or double-barrier gate layer. The resonant frequencies are determined by the electron sheet concentration in the channel and the spacing between the side contacts ( source and drain). |
| [v-ryzhii-10:2002] | V. Ryzhii and I. Khmyrova. Quantum dot and quantum wire infrared photodetectors (invited). In Technical Summary Digest of Photonics West, Optoelectronics, pages 4986-26, San Jose, USA, Jan. 2003.
This paper deals with aphysical analysis of the factors determining theoperation of the quantum dot and quantum wire infrared photodetectors and their features focusing on semi-qualitative approach and comparison with quantum well infrared photodetectors. We address also the problems of computer modeling of these photodetectors. |
| [v-ryzhii-11:2002] | M.S. Shur, V. Ryzhii, Y. Deng, and W. Knap. Terahertz detectors using surface plasmawaves in short channel HEMTs. In Technical Summary Digest of Photonics West, Optoelectronics, pages 4999-14, San Jose, USA, Jan. 2003.
We discuss a new approach to optoelectronic detection of electromagnetic radiation in terahertz range using plasma wave excitation in field effect transistors. We review the theory of plasma waves in field effect transistors and discuss different device structures that can use these waves for detection of the terahertz and subterahertz radiation. We also present some of our recent experimental results demonstrating both resonant and non-resonant detection of subterahertz and terahertz radiation. |
| [v-ryzhii-12:2002] | V. Ryzhii, A. Satou, I. Khmyrova, T. Ikegami, P.O. Vaccaro, K. Kubota, J.M. Zanardi Ocampo, and T. Aida. Device model for three-terminal lateral p-n junction quantum well lasers. In Technical Summary Digest of Photonics West, Optoelectronics, pages 4986-20, San Jose, USA, Jan. 2003.
We present a device model for a lateral p-n junction quantum-well edgeemitting laser-transistor with an extra gate contact. Such a contact provides anopportunity to control the confinement conditions of the electrons injected into the active region and, as a consequence, the threshold current and output optical power by the gate voltage. Using the proposed model, we calculate the laser dc characteristics and estimate its modulation performance. We show that the application of negative gate voltages can lead to a substantial decrease in the threshold current. The estimated cut off modulation frequency associated with the gate recharging can bemuch higher than those associated with the photon and electron lifetimes. |
| [v-ryzhii-13:2002] | V. Ryzhii, I. Khmyrova, J.M. Zanardi Ocampo, P.O. Vaccaro, K.Kubota, and T. Aida. Gate controlled lateral p-n junction quantum well laser. In Abstr. of 4th Int. Conf. on Low Dimensional Structures and Devices, pages MoO{11, Fortaleza-Ceara, Brazil, Dec. 2002.
In this communication, we evaluate the proposed edge-emitting quantumwell lasers with the lateral p-n junction in the quantum well (QWLJ laser). This laser is akin to QWLJ lasers fabricated and measured previously, but it's supplied with the gate contact to decrease the threshold current and provide the voltage control of the output optical power. |
| [v-ryzhii-14:2002] | V. Ryzhii and M. Shur. Self-excitation of plasma oscillations in a heterostructure field-effect transistor stimulated by tunneling and resonant-tunneling injection and transit-time effects. In Int. Advance Heterostructure Workshop, Hawaii, USA, Dec. 2002. |
| [v-ryzhii-15:2002] | V. Ryzhii, A. Satou, I. Khmyrova, P.O. Vaccaro, T. Aida, and M. Shur. Excitation of plasma oscillations and terahertz photomixing in high-electron mobility transistor. InTechn. Digest of 2002 Int. Topical Meeting on Microwave Photonics, pages 321-324, Awaji, Japan, Nov. 2002.
We consider the excitation of plasma oscillations in the channel of a high-electron mobility transistor by the transient near infrared radiation,. This effect results in the pertinent excitation of the electric current in the external circuit that can be used for generation of the terahertz electromagnetic radiation. |
| [v-ryzhii-16:2002] | V. Ryzhii, I. Khmyrova, and S. Oktyabrsky. Device model of integrated QWIP-HBT-LED pixel for infrared focal plane arrays. In Proc. of the 32nd European Solid-State Device Research Conference, pages 643-646, Firenze, Italy, Sep. 2002.
We propose and evaluate a novel device based on integration of quantumwell infrared photodetector (QWIP), heterostructure bipolar transistor (HBT), and light-emitting diode (LED) for up-conversion of middle infrared into near infrared (visible) radiation. Its operation is associated with intersubband absorption of middle infrared radiation in the QWIP, amplification of the QWIP output electric signal in the HBT and emission of near infrared or visible radiation from the LED driven by the current injected from the HBT. The integrated QWIP-HBT-LED device can serve as a highly effective pixel for infrared focal plane arrays. |
| [v-ryzhii-17:2002] | Y. Deng, W. Knap, S. Rumyantsev, R. Gaska, A. Khan, V. Ryzhii, E. Kaminska, A. Piotrowska, J. Lusakowski, and M. Shur. Subterahertz Detection byHigh Electron Mobility Transistors at Large Forward Gate Bias. In 2002 IEEE Lester Eastman Conf. on High Performance Devices, pages 135-142, Newark, USA, Aug. 2002. |
| [v-ryzhii-18:2002] | V. Ryzhii and M. Shur. Tunneling-and barrier-injection transit-time mechanisms of terahertz plasma instability in two-dimensional heterostructure. In Abstr. of Int. Conf. on Superlattices, Nanostructures and Nano-devices (ICSNN 2002), pages ThO-17, Toulouse, France, Jul. 2002.
Plasma instabilities in heterostructures with a two-dimensional (2D) electron channel attract a significant interest due to their potential use of generating terahertz (THz) radiation. Recently, the authors showed theoretically that such instabilities leading to the excitation of the plasma oscillations in the THz range of frequencies can occur in the high electron mobility heterostructures with resonant-tunneling extraction of electrons from a 2D channel. In this communication we demonstrate that the self-excitation of plasma oscillations can take place in similar heterostructures with the usual tunneling or thermionic injection from 2D channel. |
| [v-ryzhii-19:2002] | L. Pichl, J. Horacek, V. Mitin, and V. Ryzhii. Tunneling effects and electron transport in quantum dot structures. In 23rd Int. Conf. on Low Temperature Physics (LT-23), Hiroshima, Japan, Aug. 2002.
Using an analytical model of electron confinement in quantum dots, we have calculated the tunneling rates for electron quasi-bound states. Results of the quantum mechanical analysis are transferred into the device characteristics of common multi-layer quantum dot heterostructures. |
| [vyurkov-01:2002] | V. V'yurkov, A. Vetrov, and V. Ryzhii. Pseudo-gap and spin polarization in a two-dimensional electron gas. In Zh. Alferov and Editors Esaki, L., editors, 11th International Symposium Nanostructures: Physics andTechnology, pages 251-252, St.Petersburg, June2003. Ioffe Institute, Ioffe Institute.
We calculated the density of states of a two-dimensional electron gas in a spin-polarized state and revealed a pseudo-gap observed in recent tunneling spectroscopy experiments. |
| [vyurkov-02:2002] | V. V'yurkov and A. Vetrov. Effect of screening on spin polarization in a two-dimensional electron gas. In 15th International Conference on Electronic Properties of Two-Dimensional Systems, pages 661-664, Nara, July 2003. Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, University of Tokyo.
We calculated the spin susceptibility of a two-dimensional electron gas taking into account the screening and obtained a good agreement with experimental curves. We also revealed the conditions of a spontaneous spin polarization. |
| [vyurkov-03:2002] | V. Ryzhii, V. V'yurkov, P. Vaccaro, and T. Aida. Physics and characteristics of lateral p-n junction tunneling transistor. In 11th International Conference on Modulated Semiconductor Structures, pages 482-483, Nara, July 2003. Institute of Industrial Science, University of Tokyo, Institute of Industrial Science, University of Tokyo.
The current-voltage characteristics of a lateral p-n junction tunneling transistor were calculated. |
| [m-ryzhii-07:2002] | Maxim Ryzhii. Subsidy of Fukushima Prefectural Foundation for Advancement of Science and Education, 2002-2003. |
| [v-ryzhii-20:2002] | V. Ryzhii. Research on computer modeling for simulation and optimization of lateral-junction devices, ATR Adaptive Communication Research Laboratories, 2002. |
| [m-ryzhii-08:2002] | Maxim Ryzhii, 2002. The Institute of Electrical and Electronics Engineers, USA (1996.01 - to present), Senior Member |
| [m-ryzhii-09:2002] | Maxim Ryzhii, 2002. American Physical Society, USA (1995.07 - lifelong membership), Member |
| [v-ryzhii-21:2002] | Victor Ryzhii, 2002. Russian Academy of Sciences (Brunch of Informatics, Computer Engineering and Automation). (1987.12 - lifelong membership), Corresponding Member |
| [v-ryzhii-22:2002] | Victor Ryzhii, 2002. The Institute of Electrical and Electronics Engineers, USA.(1994.03 - to present)Senior Member |
| [v-ryzhii-23:2002] | Victor Ryzhii, 2002. American Physical Society, USA. (1995.07 - lifelong membership), Member |
| [v-ryzhii-24:2002] | Victor Ryzhii, 2002. Japan Society of Applied Physics (1993.11 - to present), Member |
| [v-ryzhii-25:2002] | Victor Ryzhii, 2002. The Institute of Electronics, Information and Communication Engineers of Japan. (1993.07 - to present), Member |
| [v-ryzhii-26:2002] | Victor Ryzhii, 2002. Journal'Microelectronics'(Russian Academy of Sciences) (1990.01- topresent). Member of Editorial Board |
| [m-ryzhii-10:2002] | N. Imai. Graduation Thesis: Study of Metal-Semiconductor-Metal Photodiodes with Opaque and Transparent Contacts Based on Computer Modeling, University of Aizu, 2003.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
| [m-ryzhii-11:2002] | A. Unno. Graduation Thesis: Computer Modeling of Metal-Semiconductor-Metal Photodetector, University of Aizu, 2003.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
| [m-ryzhii-12:2002] | R. Shiraiwa. Graduation Thesis: Computer modeling of MSM photodiodes with blocking layer, University of Aizu, 2003.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
| [v-ryzhii-27:2002] | A. Satou. Graduation Thesis: Plasma and Transit-Time Mechanisms of The Terahertz Radiation Detection in High Electron Mobility Transistors, University of Aizu, 2002.
Thesis Advisor: V. Ryzhii and I. Khmyrova |
| [v-ryzhii-28:2002] | M. Kikuchi. Graduation Thesis: Effect of contact regions on plasma oscillations in high-electron mobility transistor, University of Aizu, 2002.
Thesis Advisor: I. Khmyrova |
| [v-ryzhii-29:2002] | N. Imai. Graduation Thesis: Study of Metal-Semiconductor-Metal Photodiodes with Opaque and Transparent Contacts Based on Computer Modeling, University of Aizu, 2002.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
| [v-ryzhii-30:2002] | A. Unno. Graduation Thesis: Computer Modeling of Metal-Semiconductor-Metal Photodetector, University of Aizu, 2002.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
| [v-ryzhii-31:2002] | R. Shiraiwa. Graduation Thesis: Computer modeling of MSM photodiodes with blocking layer, University of Aizu, 2002.
Thesis Advisor: M. Ryzhii and V. Ryzhii |
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Annual Review 2002